27.5A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

UF4C120070K3S 1200V/70MOHM, SIC, FAST CASCODE, Qorvo	400 In Stock	1 : ¥103.19000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	27.5A (Tc)	-	91mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1370 pF @ 800 V	-	217W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF4C120070K4S 1200V/70MOHM, SIC, FAST CASCODE, Qorvo	470 In Stock	1 : ¥107.54000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	27.5A (Tc)	-	91mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1370 pF @ 800 V	-	217W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SI7456CDP-T1-GE3 MOSFET N-CH 100V 27.5A PPAK SO-8 Vishay Siliconix	2,490 In Stock	1 : ¥13.22000 Cut Tape (CT) 3,000 : ¥5.95504 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	27.5A (Tc)	4.5V, 10V	23.5mOhm @ 10A, 10V	2.8V @ 250µA	23 nC @ 10 V	±20V	730 pF @ 50 V	-	5W (Ta), 35.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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27.5A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.