22A (Ta), 70A (Tc) Single FETs, MOSFETs

Results: 6
Manufacturer
Alpha & Omega Semiconductor Inc.Panasonic Electronic ComponentsVishay Siliconix
Series
-AlphaSGT™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New DesignsObsolete
Drain to Source Voltage (Vdss)
30 V100 V
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V3.3mOhm @ 17A, 10V4.6mOhm @ 15A, 10V6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.4V @ 250µA2.6V @ 250µA3V @ 3.35mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 4.5 V32 nC @ 10 V49 nC @ 10 V66 nC @ 10 V
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 15 V2010 pF @ 15 V3420 pF @ 50 V3920 pF @ 10 V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)2.8W (Ta), 28W (Tc)3.7W (Ta), 36W (Tc)6.2W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
HSO8-F4-BPowerPAK® SO-8TO-251ATO-251BTO-252 (DPAK)
Package / Case
8-PowerSMD, Flat LeadsPowerPAK® SO-8TO-251-3 Stub Leads, IPAKTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252, (D-Pak)
AOD508
MOSFET N-CH 30V 22A/70A TO252
Alpha & Omega Semiconductor Inc.
23,914
In Stock
1 : ¥7.06000
Cut Tape (CT)
2,500 : ¥2.69403
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
3mOhm @ 20A, 10V
2.2V @ 250µA
49 nC @ 10 V
±20V
2010 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-HSO Series
SK8603160L
MOSFET N-CH 30V 22A/70A 8HSO
Panasonic Electronic Components
2,937
In Stock
1 : ¥8.87000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
3.3mOhm @ 17A, 10V
3V @ 3.35mA
22 nC @ 4.5 V
±20V
3920 pF @ 10 V
-
2.8W (Ta), 28W (Tc)
150°C (TJ)
Surface Mount
HSO8-F4-B
8-PowerSMD, Flat Leads
PowerPAK SO-8
SIRA84BDP-T1-GE3
MOSFET N-CH 30V 22A/70A PPAK SO8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.33067
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
4.6mOhm @ 15A, 10V
2.4V @ 250µA
32 nC @ 10 V
+20V, -16V
1050 pF @ 15 V
-
3.7W (Ta), 36W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
0
In Stock
Check Lead Time
2,500 : ¥5.02571
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
22A (Ta), 70A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2.6V @ 250µA
66 nC @ 10 V
±20V
3420 pF @ 50 V
-
6.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
3,500 : ¥5.32837
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
22A (Ta), 70A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2.6V @ 250µA
66 nC @ 10 V
±20V
3420 pF @ 50 V
-
6.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
TO-251A
AOI508
MOSFET N-CH 30V 22A/70A TO251A
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
3mOhm @ 20A, 10V
2.2V @ 250µA
49 nC @ 10 V
±20V
2010 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPAK
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22A (Ta), 70A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.