225A (Tc) Single FETs, MOSFETs

Results: 12
Manufacturer
Diodes IncorporatedInfineon TechnologiesLittelfuse Inc.Microchip TechnologyMicrosemi Corporation
Series
-CoolSiC™Linear L2™POWER MOS V®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V60 V75 V100 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V, 18V
Rds On (Max) @ Id, Vgs
1mOhm @ 30A, 10V1.2mOhm @ 30A, 10V1.5mOhm @ 30A, 10V1.6mOhm @ 30A, 10V7mOhm @ 120A, 10V7mOhm @ 500mA, 10V9.9mOhm @ 108A, 18V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA4V @ 5mA4.5V @ 3mA5.2V @ 47mA
Gate Charge (Qg) (Max) @ Vgs
115.5 nC @ 10 V130.6 nC @ 10 V138 nC @ 10 V144 nC @ 10 V289 nC @ 18 V546 nC @ 10 V1050 nC @ 10 V
Vgs (Max)
+20V, -5V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
8306 pF @ 30 V8320 pF @ 30 V9170 pF @ 800 V10787 pF @ 20 V11085 pF @ 20 V19000 pF @ 25 V21600 pF @ 25 V
Power Dissipation (Max)
3.1W (Ta), 187.5W (Tc)3.2W (Ta), 167W (Tc)3.2W (Ta), 187.5W (Tc)3.4W (Ta), 158W (Tc)700W (Tc)735W (Tc)750W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
ISOTOP®PG-TO247-3PG-TO247-4-8PowerDI5060-8PowerDI5060-8 (SWP)PowerDI5060-8 (Type K)SOT-227B
Package / Case
8-PowerTDFNSOT-227-4, miniBLOCTO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
436
In Stock
1 : ¥485.69000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
133
In Stock
1 : ¥496.36000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
DMPH4015SPSQ-13
DMTH61M8LPS-13
MOSFET N-CH 60V 225A PWRDI
Diodes Incorporated
1,715
In Stock
2,500
Factory
1 : ¥18.72000
Cut Tape (CT)
2,500 : ¥8.42142
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
225A (Tc)
4.5V, 10V
1.6mOhm @ 30A, 10V
3V @ 250µA
115.5 nC @ 10 V
±20V
8320 pF @ 30 V
-
3.2W (Ta), 187.5W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
IXYK1x0xNxxxx
IXTN240N075L2
MOSFET N-CH 75V 225A SOT227B
Littelfuse Inc.
303
In Stock
1 : ¥444.23000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
225A (Tc)
10V
7mOhm @ 120A, 10V
4.5V @ 3mA
546 nC @ 10 V
±20V
19000 pF @ 25 V
-
735W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
MOSFET BVDSS: 41V~60V POWERDI506
DMTH61M5SPSW-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
2,119
In Stock
1 : ¥15.84000
Cut Tape (CT)
2,500 : ¥7.13307
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
225A (Tc)
10V
1.5mOhm @ 30A, 10V
4V @ 250µA
130.6 nC @ 10 V
±20V
8306 pF @ 30 V
-
3.2W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerDI5060-8 (SWP)
8-PowerTDFN
PowerDI5060-8
DMTH61M8LPSQ-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
2,500
In Stock
1 : ¥20.52000
Cut Tape (CT)
2,500 : ¥9.25606
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
225A (Tc)
4.5V, 10V
1.6mOhm @ 30A, 10V
3V @ 250µA
115.5 nC @ 10 V
±20V
8320 pF @ 30 V
-
3.2W (Ta), 187.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
PowerDI5060-8
DMTH41M2SPSQ-13
MOSFET BVDSS: 31V~40V POWERDI506
Diodes Incorporated
2,112
In Stock
247,500
Factory
1 : ¥21.76000
Cut Tape (CT)
2,500 : ¥10.46750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
225A (Tc)
10V
1.2mOhm @ 30A, 10V
4V @ 250µA
138 nC @ 10 V
±20V
11085 pF @ 20 V
-
3.4W (Ta), 158W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
PowerDI5060-8
DMTH41M2SPS-13
MOSFET BVDSS: 31V~40V POWERDI506
Diodes Incorporated
2,200
In Stock
5,000
Factory
1 : ¥22.58000
Cut Tape (CT)
2,500 : ¥10.19346
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
225A (Tc)
10V
1.2mOhm @ 30A, 10V
4V @ 250µA
138 nC @ 10 V
±20V
11085 pF @ 20 V
-
3.4W (Ta), 158W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
MOSFET BVDSS: 41V~60V POWERDI506
DMTH61M5SPSWQ-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
0
In Stock
Check Lead Time
2,500 : ¥7.92492
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
225A (Tc)
10V
1.5mOhm @ 30A, 10V
4V @ 250µA
130.6 nC @ 10 V
±20V
8306 pF @ 30 V
-
3.2W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8 (SWP)
8-PowerTDFN
PowerDI5060-8
DMTH4001SPSQ-13
MOSFET BVDSS: 31V~40V POWERDI506
Diodes Incorporated
0
In Stock
2,500 : ¥9.33100
Tape & Reel (TR)
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
225A (Tc)
10V
1mOhm @ 30A, 10V
4V @ 250µA
144 nC @ 10 V
±20V
10787 pF @ 20 V
-
3.1W (Ta), 187.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
SOT-227-4,-miniBLOC
APT10M07JVFR
MOSFET N-CH 100V 225A ISOTOP
Microchip Technology
0
In Stock
Check Lead Time
10 : ¥558.34900
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
225A (Tc)
-
7mOhm @ 500mA, 10V
4V @ 5mA
1050 nC @ 10 V
-
21600 pF @ 25 V
-
-
-
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
SOT-227-4, miniBLOC
APT10M07JVR
MOSFET N-CH 100V 225A ISOTOP
Microsemi Corporation
0
In Stock
Obsolete
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
225A (Tc)
10V
-
4V @ 5mA
1050 nC @ 10 V
±30V
21600 pF @ 25 V
-
700W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
Showing
of 12

225A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.