222A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDP2D3N10C MOSFET N-CH 100V 222A TO220-3 onsemi	186 In Stock 162,400 Factory	1 : ¥50.98000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	222A (Tc)	10V	2.3mOhm @ 100A, 10V	4V @ 700µA	152 nC @ 10 V	±20V	11180 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDPF2D3N10C MOSFET N-CH 100V 222A TO220F onsemi	1,019 In Stock 3,000 Factory	1 : ¥54.27000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	222A (Tc)	10V	2.3mOhm @ 100A, 10V	4V @ 700µA	152 nC @ 10 V	±20V	11180 pF @ 50 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
G040P04M MOSFET P-CH 40V 222A TO-263 Goford Semiconductor	481 In Stock	1 : ¥15.68000 Cut Tape (CT) 1,000 : ¥7.45278 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	222A (Tc)	4.5V, 10V	3.5mOhm @ 1A, 10V	2.5V @ 250µA	206 nC @ 10 V	±20V	14983 pF @ 20 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G040P04T MOSFET P-CH 40V 222A TO-220 Goford Semiconductor	74 In Stock	1 : ¥14.94000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	222A (Tc)	4.5V, 10V	3.7mOhm @ 20A, 10V	2.5V @ 250µA	206 nC @ 10 V	±20V	15087 pF @ 20 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3

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222A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.