215mA (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TN5325N3-G MOSFET N-CH 250V 215MA TO92-3 Microchip Technology	1,235 In Stock	1 : ¥6.16000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	250 V	215mA (Ta)	4.5V, 10V	7Ohm @ 1A, 10V	2V @ 1mA	-	±20V	110 pF @ 25 V	-	740mW (Ta)	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NTK3142PT1G MOSFET P-CH 20V 215MA SOT723 onsemi	0 In Stock 20,206 Marketplace	Obsolete	-	Tape & Reel (TR) Cut Tape (CT) Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	215mA (Ta)	1.8V, 4.5V	4Ohm @ 260mA, 4.5V	1.3V @ 250µA	-	±8V	15.3 pF @ 10 V	-	280mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
DMP68D1LFB-7B DIODE Diodes Incorporated	0 In Stock 130,000 Factory Check Lead Time	10,000 : ¥0.35562 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	65 V	215mA (Ta)	2.5V, 5V	8Ohm @ 100mA, 5V	2.1V @ 250µA	0.6 nC @ 5 V	±20V	42 pF @ 30 V	-	700mW	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
TN5325N3-G-P002 MOSFET N-CH 250V 215MA TO92-3 Microchip Technology	0 In Stock Check Lead Time	2,000 : ¥5.25428 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250 V	215mA (Ta)	4.5V, 10V	7Ohm @ 1A, 10V	2V @ 1mA	-	±20V	110 pF @ 25 V	-	740mW (Ta)	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NTK3142PT5G MOSFET P-CH 20V 215MA SOT723 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	215mA (Ta)	1.8V, 4.5V	4Ohm @ 260mA, 4.5V	1.3V @ 250µA	-	±8V	15.3 pF @ 10 V	-	280mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.