2.9A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2302DDS-T1-GE3 MOSFET N-CH 20V 2.9A SOT23-3 Vishay Siliconix	31,119 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.05113 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	2.9A (Tj)	2.5V, 4.5V	57mOhm @ 3.6A, 4.5V	850mV @ 250µA	5.5 nC @ 4.5 V	±8V	-	-	710mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTHD4N02FT1G MOSFET N-CH 20V 2.9A CHIPFET onsemi	0 In Stock 238,219 Marketplace	Obsolete	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	2.9A (Tj)	2.5V, 4.5V	80mOhm @ 2.9A, 4.5V	1.2V @ 250µA	4 nC @ 4.5 V	±12V	300 pF @ 10 V	Schottky Diode (Isolated)	910mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET™	8-SMD, Flat Leads
BSP320SL6433 SMALL-SIGNAL N-CHANNEL MOSFET Infineon Technologies	7,937 Marketplace	Unavailable Unavailable in your selected currency	SIPMOS®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2.9A (Tj)	10V	120mOhm @ 2.9A, 10V	4V @ 20µA	12 nC @ 10 V	±20V	340 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA
NTHD4N02FT1 MOSFET N-CH 20V 2.9A CHIPFET onsemi	0 In Stock 12,000 Marketplace	3,000 : ¥1.89055 Tape & Reel (TR)	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	2.9A (Tj)	2.5V, 4.5V	80mOhm @ 2.9A, 4.5V	1.2V @ 250µA	4 nC @ 4.5 V	±12V	300 pF @ 10 V	Schottky Diode (Isolated)	910mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET™	8-SMD, Flat Leads
BSP320SH6433XTMA1 MOSFET N-CH 60V 2.9A SOT223 Infineon Technologies	0 In Stock	4,000 : ¥2.46717 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.9A (Tj)	10V	120mOhm @ 2.9A, 10V	4V @ 20µA	9.3 nC @ 7 V	±20V	340 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BSP320SH6327XTSA1 MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies	0 In Stock	1 : ¥6.16000 Cut Tape (CT) 1,000 : ¥2.62952 Tape & Reel (TR)	SIPMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.9A (Tj)	10V	120mOhm @ 2.9A, 10V	4V @ 20µA	12 nC @ 10 V	±20V	340 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.