18A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

PSMN075-100MSEX MOSFET N-CH 100V 18A LFPAK33 Nexperia USA Inc.	41,372 In Stock	1 : ¥6.24000 Cut Tape (CT) 1,500 : ¥2.64963 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	18A (Tj)	10V	71mOhm @ 5A, 10V	4V @ 1mA	16.4 nC @ 10 V	±20V	773 pF @ 50 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies	1,975 In Stock	1 : ¥17.57000 Cut Tape (CT) 2,000 : ¥7.91167 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tj)	10V	180mOhm @ 5.6A, 10V	4.7V @ 140µA	17 nC @ 10 V	±20V	743 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2	8-PowerSFN
FQPF18N50V2SDTU N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,950 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	18A (Tj)	10V	265mOhm @ 9A, 10V	5V @ 250µA	55 nC @ 10 V	±30V	3290 pF @ 25 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
IPTA60R180CM8XTMA1 IPTA60R180CM8XTMA1 Infineon Technologies	95 In Stock	1 : ¥16.67000 Cut Tape (CT) 2,000 : ¥7.51686 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tj)	10V	180mOhm @ 5.6A, 10V	4.7V @ 140µA	17 nC @ 10 V	±20V	743 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN
IPD60R180CM8XTMA1 IPD60R180CM8XTMA1 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥14.45000 Cut Tape (CT) 2,500 : ¥6.50555 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tj)	10V	180mOhm @ 5.6A, 10V	4.7V @ 140µA	17 nC @ 10 V	±20V	743 pF @ 400 V	-	127W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6038YNXC7G 600V 18A TO-220FM, HIGH-SPEED SW Rohm Semiconductor	0 In Stock Check Lead Time	1 : ¥44.72000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tj)	10V, 12V	96mOhm @ 9A, 12V	6V @ 2.5mA	50 nC @ 10 V	±30V	2350 pF @ 100 V	-	81W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM	TO-220-3 Full Pack

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.