179A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

AUIRL7736M2TR MOSFET N-CH 40V 179A DIRECTFET Infineon Technologies	4,800 In Stock	1 : ¥28.16000 Cut Tape (CT) 4,800 : ¥13.16600 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	179A (Tc)	4.5V, 10V	3mOhm @ 67A, 10V	2.5V @ 150µA	78 nC @ 4.5 V	±16V	5055 pF @ 25 V	-	2.5W (Ta), 63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric M4	DirectFET™ Isometric M4
AUIRL7736M2TR MOSFET N-CH 40V 179A DIRECTFET International Rectifier	13,183 Marketplace	Unavailable Unavailable in your selected currency	HEXFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	179A (Tc)	4.5V, 10V	3mOhm @ 67A, 10V	2.5V @ 150µA	78 nC @ 4.5 V	±16V	5055 pF @ 25 V	-	2.5W (Ta), 63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric M4	DirectFET™ Isometric M4
IRLBA3803 MOSFET N-CH 30V 179A SUPER-220 Vishay Siliconix	0 In Stock	200 : ¥23.58140 Tube	-	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	179A (Tc)	4.5V, 10V	5mOhm @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	5000 pF @ 25 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	Super-220™
IRLBA3803P MOSFET N-CH 30V 179A SUPER-220 Infineon Technologies	0 In Stock	50 : ¥35.48640 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	179A (Tc)	-	5mOhm @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	-	5000 pF @ 25 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.