174A (Tc) Single FETs, MOSFETs

Results: 5
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
20 V55 V150 V
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
4mOhm @ 104A, 10V4.4mOhm @ 50A, 10V4.4mOhm @ 87A, 10V5mOhm @ 101A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.6V @ 221µA4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V100 nC @ 10 V120 nC @ 10 V260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V5480 pF @ 25 V6500 pF @ 75 V8000 pF @ 75 V
Power Dissipation (Max)
200W (Tc)300W (Tc)330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKPG-HSOF-8PG-TO263-7SUPER-220™ (TO-273AA)
Package / Case
8-PowerSFNTO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7, D2PAK (6 Leads + Tab)TO-273AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7, D2Pak
IPB044N15N5ATMA1
MOSFET N-CH 150V 174A TO263-7
Infineon Technologies
1,265
In Stock
1 : ¥51.88000
Cut Tape (CT)
1,000 : ¥29.41582
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
174A (Tc)
8V, 10V
4.4mOhm @ 87A, 10V
4.6V @ 264µA
100 nC @ 10 V
±20V
8000 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
1,860
In Stock
1 : ¥50.49000
Cut Tape (CT)
2,000 : ¥26.23555
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
174A (Tc)
8V, 10V
4.4mOhm @ 50A, 10V
4.6V @ 221µA
84 nC @ 10 V
±20V
6500 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
TO-274AC Pkg
IRFBA1405P
MOSFET N-CH 55V 174A SUPER-220
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
174A (Tc)
10V
5mOhm @ 101A, 10V
4V @ 250µA
260 nC @ 10 V
±20V
5480 pF @ 25 V
-
330W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
SUPER-220™ (TO-273AA)
TO-273AA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1302S
MOSFET N-CH 20V 174A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
174A (Tc)
10V
4mOhm @ 104A, 10V
4V @ 250µA
120 nC @ 10 V
±20V
3600 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-274AC Pkg
IRFBA1405PPBF
MOSFET N-CH 55V 174A SUPER-220
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
174A (Tc)
10V
5mOhm @ 101A, 10V
4V @ 250µA
260 nC @ 10 V
±20V
5480 pF @ 25 V
-
330W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
SUPER-220™ (TO-273AA)
TO-273AA
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of 5

174A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.