14.9A (Ta) Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 14.9A, 10V8mOhm @ 14.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V128 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
3845 pF @ 15 V5962 pF @ 15 V
Supplier Device Package
8-SOICPG-DSO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS8842NZ
MOSFET N-CH 40V 14.9A 8SOIC
onsemi
5,030
In Stock
1 : ¥9.03000
Cut Tape (CT)
2,500 : ¥3.73622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
14.9A (Ta)
4.5V, 10V
7mOhm @ 14.9A, 10V
3V @ 250µA
73 nC @ 10 V
±20V
3845 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
BSO201SPNTMA1
MOSFET P-CH 20V 14.9A 8DSO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
14.9A (Ta)
2.5V, 4.5V
8mOhm @ 14.9A, 4.5V
1.2V @ 250µA
128 nC @ 4.5 V
±12V
5962 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

14.9A (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.