13A (Ta), 64A (Tc) Single FETs, MOSFETs

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Applied FiltersRemove All

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-WDFN
NVTFS9D6P04M8LTAG
MOSFET P-CH 40V 13A/64A 8WDFN
onsemi
18,924
In Stock
3,000
Factory
1 : ¥11.66000
Cut Tape (CT)
1,500 : ¥5.13151
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 64A (Tc)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.4V @ 580µA
34.6 nC @ 10 V
±20V
2312 pF @ 20 V
-
3.2W (Ta), 75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFWS9D6P04M8LTAG
MOSFET P-CH 40V 13A/64A 8WDFN
onsemi
2,980
In Stock
1 : ¥10.10000
Cut Tape (CT)
1,500 : ¥4.44741
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 64A (Tc)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.4V @ 580µA
34.6 nC @ 10 V
±20V
2312 pF @ 20 V
-
3.2W (Ta), 75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFS9D6P04M8L
MOSFET P-CH 20V 8-SOIC
onsemi
0
In Stock
Active
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 64A (Tc)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.4V @ 580µA
34.6 nC @ 10 V
±20V
2312 pF @ 20 V
-
3.2W (Ta), 75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
Showing
of 3

13A (Ta), 64A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.