131A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

MSC015SMA070B SICFET N-CH 700V 131A TO247-3 Microchip Technology	262 In Stock	1 : ¥293.58000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	131A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 1mA	215 nC @ 20 V	+25V, -10V	4500 pF @ 700 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SUM70060E-GE3 MOSFET N-CH 100V 131A TO263 Vishay Siliconix	629 In Stock	1 : ¥16.42000 Cut Tape (CT) 800 : ¥9.18041 Tape & Reel (TR)	ThunderFET®	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	131A (Tc)	7.5V, 10V	5.6mOhm @ 30A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	3330 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF1405STRLPBF MOSFET N-CH 55V 131A D2PAK Infineon Technologies	2,685 In Stock	1 : ¥21.51000 Cut Tape (CT) 800 : ¥12.00971 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUP70060E-GE3 MOSFET N-CH 100V 131A TO220AB Vishay Siliconix	500 In Stock	50 : ¥13.18660 Bulk	ThunderFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	131A (Tc)	7.5V, 10V	5.8mOhm @ 30A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	3330 pF @ 50 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1405LPBF MOSFET N-CH 55V 131A TO262 Infineon Technologies	0 In Stock	250 : ¥17.83168 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IRF1405STRR MOSFET N-CH 55V 131A D2PAK Infineon Technologies	0 In Stock	800 : ¥28.03330 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF1405S MOSFET N-CH 55V 131A D2PAK Infineon Technologies	0 In Stock	50 : ¥36.79300 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF1405SPBF MOSFET N-CH 55V 131A D2PAK Infineon Technologies	0 In Stock	Discontinued at Digi-Key	HEXFET®	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF1405STRRPBF MOSFET N-CH 55V 131A D2PAK Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.