128A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

G3R20MT12K SIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor	1,038 In Stock	1 : ¥296.29000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	128A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	±15V	5873 pF @ 800 V	-	542W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
SUM80090E-GE3 MOSFET N-CH 150V 128A D2PAK Vishay Siliconix	1,221 In Stock	1 : ¥24.14000 Cut Tape (CT) 800 : ¥14.59375 Tape & Reel (TR)	ThunderFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	7.5V, 10V	9mOhm @ 30A, 10V	5V @ 250µA	95 nC @ 10 V	±20V	3425 pF @ 75 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUP80090E-GE3 MOSFET N-CH 150V 128A TO220AB Vishay Siliconix	897 In Stock	1 : ¥24.14000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	7.5V, 10V	9.4mOhm @ 30A, 10V	5V @ 250µA	95 nC @ 10 V	±20V	3425 pF @ 75 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
FDP4D5N10C MOSFET N-CH 100V 128A TO220-3 onsemi	573 In Stock	1 : ¥33.82000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	4.5mOhm @ 100A, 10V	4V @ 310µA	68 nC @ 10 V	±20V	5065 pF @ 50 V	-	2.4W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FDPF4D5N10C MOSFET N-CH 100V 128A TO220F onsemi	1,561 In Stock	1 : ¥34.97000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	4.5mOhm @ 100A, 10V	4V @ 310µA	68 nC @ 10 V	±20V	5065 pF @ 50 V	-	2.4W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
E4M0015075K1 MOSFETS AUTOMOTIVE 372W 3.8V NC Wolfspeed, Inc.	344 In Stock	1 : ¥308.61000 Bulk	E	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	128A (Tc)	15V	21mOhm @ 55.8A, 15V	3.8V @ 15.4mA	191 nC @ 15 V	+19V, -8V	5128 pF @ 500 V	-	372W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
DMN6010SCTBQ-13 MOSFET BVDSS: 41V~60V TO263 T&R Diodes Incorporated	0 In Stock Check Lead Time	800 : ¥12.92746 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	128A (Tc)	10V	10mOhm @ 25A, 10V	4V @ 1mA	46 nC @ 10 V	±20V	2692 pF @ 25 V	-	5W (Ta), 312W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN6010SCTB-13 MOSFET BVDSS: 41V~60V TO263 T&R Diodes Incorporated	0 In Stock Check Lead Time	800 : ¥13.38794 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	128A (Tc)	10V	10mOhm @ 25A, 10V	4V @ 1mA	46 nC @ 10 V	±20V	2692 pF @ 25 V	-	5W (Ta), 312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTK128N15 MOSFET N-CH 150V 128A TO264 IXYS	0 In Stock	Obsolete	MegaMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	128A (Tc)	10V	15mOhm @ 500mA, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6000 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
AUIRFP4310Z MOSFET N-CH 100V 128A TO247AC Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	128A (Tc)	10V	6mOhm @ 77A, 10V	4V @ 150µA	188 nC @ 10 V	±20V	7120 pF @ 50 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.