12.6A (Tc) Single FETs, MOSFETs

Results: 6
Manufacturer
Fairchild SemiconductoronsemiVishay Siliconix
Series
-QFET®TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V200 V800 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
19mOhm @ 9A, 10V230mOhm @ 6.3A, 5V470mOhm @ 6.3A, 10V750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V42 nC @ 10 V88 nC @ 10 V120 nC @ 5 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V1500 pF @ 15 V3250 pF @ 25 V3500 pF @ 25 V
Power Dissipation (Max)
4.8W (Tc)90W (Tc)150W (Tc)300W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICTO-3PTO-3PFTO-3PN
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-3P-3 Full PackTO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
Vishay Siliconix
33,976
In Stock
1 : ¥3.86000
Cut Tape (CT)
2,500 : ¥1.03815
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12.6A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
4.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
2SK4221
FQA13N80
MOSFET N-CH 800V 12.6A TO3PN
Fairchild Semiconductor
134
Marketplace
Unavailable
Unavailable in your selected currency
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
800 V
12.6A (Tc)
10V
750mOhm @ 6.3A, 10V
5V @ 250µA
88 nC @ 10 V
±30V
3500 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
TO-3P-3,TO-247-3
FQA13N80-F109
MOSFET N-CH 800V 12.6A TO3PN
onsemi
26
In Stock
1 : ¥49.18000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
12.6A (Tc)
10V
750mOhm @ 6.3A, 10V
5V @ 250µA
88 nC @ 10 V
±30V
3500 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
TO-3P-3,TO-247-3
FQA12P20
MOSFET P-CH 200V 12.6A TO3P
onsemi
0
In Stock
Obsolete
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
200 V
12.6A (Tc)
10V
470mOhm @ 6.3A, 10V
5V @ 250µA
40 nC @ 10 V
±30V
1200 pF @ 25 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-220F
SFF9250L
MOSFET P-CH 200V 12.6A TO3PF
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
200 V
12.6A (Tc)
5V
230mOhm @ 6.3A, 5V
2V @ 250µA
120 nC @ 5 V
±20V
3250 pF @ 25 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
TO-3P-3,TO-247-3
FQA13N80
MOSFET N-CH 800V 12.6A TO3PN
onsemi
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
800 V
12.6A (Tc)
10V
750mOhm @ 6.3A, 10V
5V @ 250µA
88 nC @ 10 V
±30V
3500 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
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12.6A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.