113A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

GCMX020B120S1-E1 SIC 1200V 20M MOSFET SOT-227 SemiQ	26 In Stock	1 : ¥335.86000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	113A (Tc)	20V	28mOhm @ 50A, 20V	4V @ 20mA	216 nC @ 20 V	+25V, -10V	5349 pF @ 1000 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
MSC017SMA120B MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology	32 In Stock	1 : ¥382.25000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	22mOhm @ 40A, 20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	+22V, -10V	5280 pF @ 1000 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
MSC017SMA120B4 MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology	31 In Stock	1 : ¥393.66000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	22mOhm @ 40A, 20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	+22V, -10V	5280 pF @ 1000 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
GCMS020B120S1-E1 SIC 1200V 20M MOSFET & 50A SBD S SemiQ	17 In Stock	1 : ¥422.48000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	113A (Tc)	20V	28mOhm @ 50A, 20V	4V @ 20mA	215 nC @ 20 V	+25V, -10V	5279 pF @ 1000 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IPDQ60T017S7XTMA1 HIGH POWER_NEW Infineon Technologies	0 In Stock Check Lead Time	1 : ¥111.90000 Cut Tape (CT) 750 : ¥77.24463 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	113A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.88mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPQC60T017S7XTMA1 HIGH POWER_NEW Infineon Technologies	0 In Stock Check Lead Time	1 : ¥111.90000 Cut Tape (CT) 750 : ¥77.24463 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	113A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.88mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module

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113A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.