10A (Ta), 56A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFH5015TRPBF MOSFET N-CH 150V 10A/56A 8PQFN Infineon Technologies	7,712 In Stock	1 : ¥15.60000 Cut Tape (CT) 4,000 : ¥7.03270 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	10A (Ta), 56A (Tc)	10V	31mOhm @ 34A, 10V	5V @ 150µA	50 nC @ 10 V	±20V	2300 pF @ 50 V	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IRFH5015TR2PBF MOSFET N-CH 150V 10A 8VQFN Infineon Technologies	0 In Stock	1 : ¥18.88000 Cut Tape (CT)	-	Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	10A (Ta), 56A (Tc)	-	31mOhm @ 34A, 10V	5V @ 150µA	50 nC @ 10 V	-	2300 pF @ 50 V	-	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.