10.3A (Tc) Single FETs, MOSFETs

Results: 12
Manufacturer
Infineon TechnologiesNXP USA Inc.Vishay Siliconix
Series
-CoolMOS™ CESIPMOS®TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
Drain to Source Voltage (Vdss)
55 V60 V100 V600 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
26mOhm @ 10A, 10V130mOhm @ 5.5A, 10V150mOhm @ 5.5A, 10V154mOhm @ 8.1A, 10V170mOhm @ 7.8A, 10V400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2V @ 21µA2.8V @ 250µA3.5V @ 300µA4V @ 1mA4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V5.8 nC @ 10 V18 nC @ 10 V19.4 nC @ 10 V22 nC @ 10 V32 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V330 pF @ 25 V426 pF @ 25 V444 pF @ 25 V690 pF @ 50 V700 pF @ 100 V
Power Dissipation (Max)
5.6W (Tc)31W (Tc)33W (Tc)50W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICD2PAKDPAKPG-TO220-3-1PG-TO220-FPPG-TO252-3PG-TO262-3-1PG-TO263-3-2TO-220AB
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3TO-220-3 Full PackTO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRG4RC10UTRPBF
SPB10N10LG
N-CHANNEL POWER MOSFET
Infineon Technologies
993
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
10V
154mOhm @ 8.1A, 10V
2V @ 21µA
22 nC @ 10 V
±20V
444 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-SOIC
SI4058DY-T1-GE3
MOSFET N-CH 100V 10.3A 8SOIC
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥4.93000
Cut Tape (CT)
2,500 : ¥1.86691
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
4.5V, 10V
26mOhm @ 10A, 10V
2.8V @ 250µA
18 nC @ 10 V
±20V
690 pF @ 50 V
-
5.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PG-TO-220-FP
IPA60R400CEXKSA1
MOSFET N-CH 600V 10.3A TO220-FP
Infineon Technologies
0
In Stock
Check Lead Time
500 : ¥5.90432
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10.3A (Tc)
10V
400mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
-
31W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-262-3
SPI10N10
MOSFET N-CH 100V 10.3A TO262-3
Infineon Technologies
0
In Stock
500 : ¥3.71346
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
10V
170mOhm @ 7.8A, 10V
4V @ 21µA
19.4 nC @ 10 V
±20V
426 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB10N10L G
MOSFET N-CH 100V 10.3A TO263-3
Infineon Technologies
0
In Stock
1,000 : ¥4.04702
Tape & Reel (TR)
Tape & Reel (TR)
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
10V
154mOhm @ 8.1A, 10V
2V @ 21µA
22 nC @ 10 V
±20V
444 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB10N10
MOSFET N-CH 100V 10.3A TO263-3
Infineon Technologies
0
In Stock
1,000 : ¥4.23339
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
10V
170mOhm @ 7.8A, 10V
4V @ 21µA
19.4 nC @ 10 V
±20V
426 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
SPP10N10
MOSFET N-CH 100V 10.3A TO220-3
Infineon Technologies
0
In Stock
500 : ¥5.19680
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
10V
170mOhm @ 7.8A, 10V
4V @ 21µA
19.4 nC @ 10 V
±20V
426 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
SPP10N10L
MOSFET N-CH 100V 10.3A TO220-3
Infineon Technologies
0
In Stock
500 : ¥5.35920
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
10.3A (Tc)
4.5V, 10V
154mOhm @ 8.1A, 10V
2V @ 21µA
22 nC @ 10 V
±20V
444 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO252-3
IPD60R400CEATMA1
MOSFET N-CH 600V 10.3A TO252-3
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
10.3A (Tc)
10V
400mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
-
83W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
D2PAK SOT404
PHB11N06LT,118
MOSFET N-CH 55V 10.3A D2PAK
NXP USA Inc.
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
10.3A (Tc)
5V, 10V
130mOhm @ 5.5A, 10V
2V @ 1mA
5.2 nC @ 5 V
±15V
330 pF @ 25 V
-
33W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DPAK SOT428
PHD3055E,118
MOSFET N-CH 60V 10.3A DPAK
NXP USA Inc.
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
10.3A (Tc)
10V
150mOhm @ 5.5A, 10V
4V @ 1mA
5.8 nC @ 10 V
±20V
250 pF @ 25 V
-
33W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB-3,SOT78
PHP3055E,127
MOSFET N-CH 60V 10.3A TO220AB
NXP USA Inc.
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
10.3A (Tc)
10V
150mOhm @ 5.5A, 10V
4V @ 1mA
5.8 nC @ 10 V
±20V
250 pF @ 25 V
-
33W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
Showing
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10.3A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.