1.17A (Ta) Single FETs, MOSFETs

Showing

of 4

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSP315PH6327XTSA1 MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	29,719 In Stock	1 : ¥6.81000 Cut Tape (CT) 1,000 : ¥2.91744 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	2V @ 160µA	7.8 nC @ 10 V	±20V	160 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP315P-E6327 MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	0 In Stock	1,000 : ¥2.14662 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	2V @ 160µA	7.8 nC @ 10 V	±20V	160 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP315PL6327HTSA1 MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	2V @ 160µA	7.8 nC @ 10 V	±20V	160 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA
BSP315PE6327T MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	2V @ 160µA	7.8 nC @ 10 V	±20V	160 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA

Showing

of 4

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.