FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SSM6N7002KFU,LF MOSFET 2N-CH 60V 0.3A US6 Toshiba Semiconductor and Storage	425,966 In Stock	1 : ¥1.72000 Cut Tape (CT) 3,000 : ¥0.33909 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	300mA	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	40pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
ALD1106PBL MOSFET 4N-CH 10.6V 14DIP Advanced Linear Devices Inc.	520 In Stock	1 : ¥54.51000 Tube	-	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	-	10.6V	-	500Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
IRFI4212H-117PXKMA1 MOSFET 2N-CH 100V 11A TO220-5 Infineon Technologies	861 In Stock	1 : ¥15.02000 Tube	-	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	11A (Tc)	72.5mOhm @ 6.6A, 10V	5V @ 250µA	18nC @ 10V	490pF @ 50V	18W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack, Formed Leads	TO-220-5 Full-Pak

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.