FET, MOSFET Arrays

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
1.5A5.1A, 3.2A
Rds On (Max) @ Id, Vgs
55mOhm @ 5.1A, 4.5V140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.7µA1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 4.5V2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
143pF @ 10V419pF @ 10V
Power - Max
500mW2.5W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
8-PowerTDFNSOT-23-6 Thin, TSOT-23-6
Supplier Device Package
PG-TSDSON-8-FLPG-TSOP6-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SC-74, SOT-457
BSL215CH6327XTSA1
MOSFET N/P-CH 20V 1.5A TSOP6-6
Infineon Technologies
15,045
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.58020
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
Logic Level Gate, 2.5V Drive
20V
1.5A
140mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.73nC @ 4.5V
143pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
TSDSON-8
BSZ15DC02KDHXTMA1
MOSFET N/P-CH 20V 5.1A 8TSDSON
Infineon Technologies
16,602
In Stock
1 : ¥10.34000
Cut Tape (CT)
5,000 : ¥4.09081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.