FET, MOSFET Arrays

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Series
NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 N-Channel (Half Bridge)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V40V
Current - Continuous Drain (Id) @ 25°C
32A45A (Tj)
Rds On (Max) @ Id, Vgs
7mOhm @ 22A, 10V7.6mOhm @ 20A, 8V
Vgs(th) (Max) @ Id
2.1V @ 250µA3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 4.5V12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
701pF @ 25V1255pF @ 15V
Power - Max
12W41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
8-PowerLDFN8-PowerVDFN
Supplier Device Package
8-LSON (5x6)PG-TDSON-8-57
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
12,725
In Stock
1 : ¥11.16000
Cut Tape (CT)
5,000 : ¥4.39355
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
45A (Tj)
7mOhm @ 22A, 10V
3V @ 9µA
12nC @ 10V
701pF @ 25V
41W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
8SON
CSD87351Q5D
MOSFET 2N-CH 30V 32A 8LSON
Texas Instruments
10,000
In Stock
1 : ¥12.56000
Cut Tape (CT)
2,500 : ¥7.51170
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
32A
7.6mOhm @ 20A, 8V
2.1V @ 250µA
7.7nC @ 4.5V
1255pF @ 15V
12W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PowerLDFN
8-LSON (5x6)
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.