FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FDC6301N MOSFET 2N-CH 25V 0.22A SSOT6 onsemi	13,554 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥1.00826 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	25V	220mA	4Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.7nC @ 4.5V	9.5pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
FDS4935BZ MOSFET 2P-CH 30V 6.9A 8SOIC onsemi	37,228 In Stock	1 : ¥7.47000 Cut Tape (CT) 2,500 : ¥3.08983 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	6.9A	22mOhm @ 6.9A, 10V	3V @ 250µA	40nC @ 10V	1360pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7342TRPBF MOSFET 2P-CH 55V 3.4A 8SO Infineon Technologies	16,707 In Stock	1 : ¥10.02000 Cut Tape (CT) 4,000 : ¥4.15032 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	55V	3.4A	105mOhm @ 3.4A, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3669S MOSFET 2N-CH 30V 13A/18A POWER56 onsemi	3,169 In Stock	1 : ¥14.45000 Cut Tape (CT) 3,000 : ¥6.50642 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	30V	13A, 18A	10mOhm @ 13A, 10V	2.7V @ 250µA	24nC @ 10V	1605pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.