FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel Complementary
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
20V60V, 50V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta), 130mA (Ta)200mA
Rds On (Max) @ Id, Vgs
1.2Ohm @ 200mA, 2.5V13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA2.5V @ 250µA, 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 10V50pF @ 25V, 45pF @ 25V
Power - Max
150mW200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
6-TSSOP, SC-88, SOT-363SOT-563, SOT-666
Supplier Device Package
EMT6SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
EMT6_EMT6 PKg
EM6K7T2R
MOSFET 2N-CH 20V 0.2A EMT6
Rohm Semiconductor
14,081
In Stock
1 : ¥4.27000
Cut Tape (CT)
8,000 : ¥1.10697
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
200mA
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
EMT6
SOT 363
BSS8402DWQ-13
MOSFET N/P-CH 60V/50V SOT363
Diodes Incorporated
9,380
In Stock
40,000
Factory
1 : ¥4.10000
Cut Tape (CT)
10,000 : ¥0.95364
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel Complementary
-
60V, 50V
115mA (Ta), 130mA (Ta)
13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
2.5V @ 250µA, 2V @ 1mA
-
50pF @ 25V, 45pF @ 25V
200mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.