FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BSD840NH6327XTSA1 MOSFET 2N-CH 20V 0.88A SOT363 Infineon Technologies	143,857 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.82227 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	880mA	400mOhm @ 880mA, 2.5V	750mV @ 1.6µA	0.26nC @ 2.5V	78pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-PO
DMG1026UV-7 MOSFET 2N-CH 60V 0.41A SOT563 Diodes Incorporated	39,475 In Stock 1,179,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.86000 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8Ohm @ 500mA, 10V	1.8V @ 250µA	0.45nC @ 10V	32pF @ 25V	580mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.