FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedMicrochip Technology
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N and 2 P-Channel2 N and 2 P-Channel (Full Bridge)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V200V
Current - Continuous Drain (Id) @ 25°C
6A, 4.2A-
Rds On (Max) @ Id, Vgs
25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V10Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11.7nC @ 10V, 11.4nC @ 10V-
Input Capacitance (Ciss) (Max) @ Vds
52pF @ 25V, 54pF @ 25V590pF @ 15V, 631pF @ 15V
Power - Max
1.5W (Ta)-
Package / Case
8-SOIC (0.154", 3.90mm Width)12-VFDFN Exposed Pad
Supplier Device Package
8-SO12-DFN (4x4)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
8 SO
DMHC3025LSD-13
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
Diodes Incorporated
69,050
In Stock
952,500
Factory
1 : ¥6.98000
Cut Tape (CT)
2,500 : ¥2.64842
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N and 2 P-Channel (Full Bridge)
Logic Level Gate
30V
6A, 4.2A
25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
2V @ 250µA
11.7nC @ 10V, 11.4nC @ 10V
590pF @ 15V, 631pF @ 15V
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
12-DFN
TC7920K6-G
MOSFET 2N/2P-CH 200V 12DFN
Microchip Technology
5,982
In Stock
1 : ¥20.20000
Cut Tape (CT)
3,300 : ¥15.43451
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N and 2 P-Channel
-
200V
-
10Ohm @ 1A, 10V
2.4V @ 1mA
-
52pF @ 25V, 54pF @ 25V
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
12-VFDFN Exposed Pad
12-DFN (4x4)
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.