Single Bipolar Transistors

Results: 2
Manufacturer
Central Semiconductor Corponsemi
Packaging
BulkTube
Current - Collector (Ic) (Max)
150 mA3 A
Voltage - Collector Emitter Breakdown (Max)
50 V60 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA1V @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA, 6V100 @ 500mA, 5V
Power - Max
400 mW30 W
Frequency - Transition
3MHz80MHz
Operating Temperature
150°C (TJ)-
Mounting Type
-Through Hole
Package / Case
-TO-220-3
Supplier Device Package
-TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3,864
In Stock
1 : ¥7.64000
Bulk
-
Bulk
Active
NPN
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
400 mW
80MHz
-
-
-
-
TO-220-3
KSD880YTU
TRANS NPN 60V 3A TO220-3
onsemi
563
In Stock
4,000
Factory
1 : ¥7.06000
Tube
-
Tube
Active
NPN
3 A
60 V
1V @ 300mA, 3A
100µA (ICBO)
100 @ 500mA, 5V
30 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.