Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V45 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V420 @ 2mA, 5V
Power - Max
250 mW1.5 W
Frequency - Transition
100MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223 (TO-261)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-223 (TO-261)
PZT2222AT1G
TRANS NPN 40V 0.6A SOT223
onsemi
121,387
In Stock
1 : ¥3.37000
Cut Tape (CT)
1,000 : ¥1.26825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
1.5 W
300MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
TO-236AB
BC857C,215
TRANS PNP 45V 0.1A TO236AB
Nexperia USA Inc.
149,594
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18554
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
100 mA
45 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.