Single Bipolar Transistors

Results: 2
Transistor Type
NPNPNP
Voltage - Collector Emitter Breakdown (Max)
50 V60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 6A1V @ 400mA, 8A
Current - Collector Cutoff (Max)
10µA10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A, 1V150 @ 270mA, 2V
Power - Max
2 W25 W
Frequency - Transition
50MHz230MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-220-3 Full Pack
Supplier Device Package
TO-220TO-220ML
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
D44H8G
TRANS NPN 60V 10A TO220
onsemi
1,438
In Stock
3,950
Factory
1 : ¥8.62000
Tube
-
Tube
Active
NPN
10 A
60 V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
2 W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220AB Full Pack
2SA2222SG
TRANS PNP 50V 10A TO220ML
onsemi
245
In Stock
1 : ¥7.06000
Tube
-
Tube
Active
PNP
10 A
50 V
500mV @ 300mA, 6A
10µA (ICBO)
150 @ 270mA, 2V
25 W
230MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220ML
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.