Bipolar RF Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BFR182WH6327XTSA1 RF TRANS NPN 12V 8GHZ SOT323-3 Infineon Technologies	12,185 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.55223 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	19dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323
BFP196WH6327XTSA1 RF TRANS NPN 12V 7.5GHZ SOT343-4 Infineon Technologies	13,802 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71341 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4-1
BFP842ESDH6327XTSA1 RF TRANS NPN 3.7V 60GHZ SOT343 Infineon Technologies	1,595 In Stock	1 : ¥6.81000 Cut Tape (CT) 3,000 : ¥1.67354 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	3.7V	60GHz	0.65dB @ 3.5GHz	26dB	120mW	150 @ 15mA, 2.5V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4-2
BFP405H6327XTSA1 RF TRANS NPN 5V 25GHZ SOT343 Infineon Technologies	5,816 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥1.34559 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-3D
CMPT918 TR PBFREE RF TRANS NPN 15V 600MHZ SOT23 Central Semiconductor Corp	6,367 In Stock	1 : ¥5.91000 Cut Tape (CT) 3,000 : ¥2.25559 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	15V	600MHz	6dB @ 60MHz	11dB	350mW	20 @ 3mA, 1V	50mA	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

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Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.