Single IGBTs

Results: 2
Series
TrenchStop™TRENCHSTOP™
Current - Collector (Ic) (Max)
60 A82 A
Current - Collector Pulsed (Icm)
90 A160 A
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 30A2.15V @ 15V, 40A
Switching Energy
1.1mJ (off)1.69mJ (on), 920µJ (off)
Gate Charge
235 nC290 nC
Td (on/off) @ 25°C
36ns/336ns-/330ns
Test Condition
600V, 30A, 10Ohm, 15V-
Supplier Device Package
PG-TO247-3PG-TO247-3-U06
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Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3
IHW30N120R5XKSA1
IGBT TRENCH FS 1200V 60A TO247-3
Infineon Technologies
187
In Stock
1 : ¥30.21000
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Trench Field Stop
1200 V
60 A
90 A
1.85V @ 15V, 30A
330 W
1.1mJ (off)
Standard
235 nC
-/330ns
600V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKW40N120CH7XKSA1
IKW40N120CH7XKSA1
IGBT TRENCH FS 1200V 82A TO247-3
Infineon Technologies
130
In Stock
1 : ¥59.93000
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Active
Trench Field Stop
1200 V
82 A
160 A
2.15V @ 15V, 40A
330 W
1.69mJ (on), 920µJ (off)
Standard
290 nC
36ns/336ns
-
120 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-U06
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.