Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

STGWA40HP65FB2 TRENCH GATE FIELD-STOP, 650 V, 4 STMicroelectronics	43 In Stock	1 : ¥22.99000 Tube	HB2	Tube	Active	Trench Field Stop	650 V	72 A	120 A	2V @ 15V, 40A	227 W	410µJ (off)	Standard	153 nC	-/125ns	400V, 40A, 4.7Ohm, 15V	140 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads
STGWA40H65FB IGBT STMicroelectronics	2 In Stock	1 : ¥23.23000 Tube	HB	Tube	Active	Trench Field Stop	650 V	80 A	160 A	2V @ 15V, 40A	283 W	498µJ (on), 363µJ (off)	Standard	210 nC	40ns/142ns	400V, 40A, 5Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.