Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IHW40N65R6XKSA1 IGBT 650V 83A TO247-3 Infineon Technologies	166 In Stock	1 : ¥24.63000 Tube	-	Tube	Active	-	650 V	83 A	120 A	1.6V @ 15V, 40A	210 W	1.1mJ (on), 420µJ (off)	Standard	159 nC	17ns/211ns	400V, 40A, 10Ohm, 15V	99 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
MIW40N65RA-BP IGBT 650V 40A,TO-247AB Micro Commercial Co	1,790 In Stock	1 : ¥28.08000 Tube	-	Tube	Active	Trench Field Stop	650 V	80 A	160 A	2.4V @ 15V, 40A	306 W	1.5mJ (on), 590µJ (off)	Standard	160 nC	12ns/124ns	400V, 40A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AB
IKFW40N65ES5XKSA1 IGBT TRENCH FS 650V 60A HSIP247 Infineon Technologies	41 In Stock	1 : ¥66.25000 Tube	Trenchstop™ 5	Tube	Active	Trench Field Stop	650 V	60 A	120 A	1.7V @ 15V, 30A	106 W	560µJ (on), 320µJ (off)	Standard	70 nC	17ns/124ns	400V, 30A, 13Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.