Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IXYT55N120A4HV IGBT PT 1200V 175A TO268HV IXYS	109 In Stock	1 : ¥115.59000 Tube	-	Tube	Active	PT	1200 V	175 A	350 A	1.8V @ 15V, 55A	650 W	2.3mJ (on), 5.3mJ (off)	Standard	110 nC	23ns/300ns	600V, 40A, 5Ohm, 15V	35 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	TO-268HV (IXYT)
IXYT85N120A4HV IGBT PT 1200V 300A TO268HV IXYS	285 In Stock	1 : ¥211.32000 Tube	-	Tube	Active	PT	1200 V	300 A	520 A	1.8V @ 15V, 85A	1150 W	4.9mJ (on), 8.3mJ (off)	Standard	200 nC	40ns/400ns	600V, 60A, 5Ohm, 15V	40 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	TO-268HV (IXYT)

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.