Single IGBTs

Results: 2
Series
TrenchStop®TrenchStop™ 5
IGBT Type
-Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector (Ic) (Max)
40 A100 A
Current - Collector Pulsed (Icm)
80 A300 A
Vce(on) (Max) @ Vge, Ic
1.35V @ 15V, 75A2.4V @ 15V, 20A
Power - Max
170 W536 W
Switching Energy
800µJ1.57mJ (on), 3.2mJ (off)
Gate Charge
120 nC436 nC
Td (on/off) @ 25°C
17ns/194ns120ns/275ns
Test Condition
400V, 20A, 14.6Ohm, 15V400V, 75A, 23Ohm, 15V
Reverse Recovery Time (trr)
59 ns112 ns
Package / Case
TO-247-3TO-247-4
Supplier Device Package
PG-TO247-3-1PG-TO247-4
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Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3
IKW20N60H3FKSA1
IGBT TRENCH FS 600V 40A TO247-3
Infineon Technologies
230
In Stock
1 : ¥22.74000
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Trench Field Stop
600 V
40 A
80 A
2.4V @ 15V, 20A
170 W
800µJ
Standard
120 nC
17ns/194ns
400V, 20A, 14.6Ohm, 15V
112 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
0
In Stock
Check Lead Time
30 : ¥56.66400
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650 V
100 A
300 A
1.35V @ 15V, 75A
536 W
1.57mJ (on), 3.2mJ (off)
Standard
436 nC
120ns/275ns
400V, 75A, 23Ohm, 15V
59 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.