Single IGBTs

Results: 2
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector (Ic) (Max)
15 A60 A
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 30A2V @ 15V, 15A
Power - Max
30 W200 W
Switching Energy
300µJ (on), 300µJ (off)1.4mJ (on), 220µJ (off)
Td (on/off) @ 25°C
60ns/170ns75ns/400ns
Test Condition
300V, 15A, 33Ohm, 15V400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr)
80 ns200 ns
Operating Temperature
150°C (TJ)175°C (TJ)
Package / Case
TO-220-3 Full PackTO-3P-3, SC-65-3
Supplier Device Package
TO-220SISTO-3P(N)
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Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
158
In Stock
1 : ¥20.69000
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600 V
15 A
60 A
2V @ 15V, 15A
30 W
300µJ (on), 300µJ (off)
Standard
-
60ns/170ns
300V, 15A, 33Ohm, 15V
80 ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS
GT50JR22(STA1,E,S)
GT30J65MRB,S1E
650V SILICON N-CHANNEL IGBT, TO-
Toshiba Semiconductor and Storage
64
In Stock
1 : ¥26.85000
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650 V
60 A
-
1.8V @ 15V, 30A
200 W
1.4mJ (on), 220µJ (off)
Standard
70 nC
75ns/400ns
400V, 15A, 56Ohm, 15V
200 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.