Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

TPH3206PS GANFET N-CH 600V 17A TO220AB Transphorm	304 In Stock	1 : ¥78.15000 Tube	-	Tube	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	600 V	17A (Tc)	10V	180mOhm @ 11A, 8V	2.6V @ 500µA	9.3 nC @ 4.5 V	±18V	760 pF @ 480 V	-	96W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H035WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	294 In Stock	1 : ¥115.34000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	12V	41mOhm @ 30A, 10V	4.8V @ 1mA	36 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H050WS GANFET N-CH 650V 34A TO247-3 Transphorm	311 In Stock	1 : ¥145.06000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	34A (Tc)	12V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TPH3206PD GANFET N-CH 600V 17A TO220AB Transphorm	37 In Stock	1 : ¥84.89000 Tube	-	Tube	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	600 V	17A (Tc)	10V	180mOhm @ 11A, 8V	2.6V @ 500µA	9.3 nC @ 4.5 V	±18V	760 pF @ 480 V	-	96W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TPH3208LDG GANFET N-CH 650V 20A 3PQFN Transphorm	9 In Stock	1 : ¥89.57000 Tube	-	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	650 V	20A (Tc)	10V	130mOhm @ 13A, 8V	2.6V @ 300µA	14 nC @ 8 V	±18V	760 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerDFN
TPH3205WSBQA GANFET N-CH 650V 35A TO247-3 Transphorm	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	650 V	35A (Tc)	10V	62mOhm @ 22A, 8V	2.6V @ 700µA	42 nC @ 8 V	±18V	2200 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP90H180PS GANFET N-CH 900V 15A TO220AB Transphorm	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	900 V	15A (Tc)	10V	205mOhm @ 10A, 10V	2.6V @ 500µA	10 nC @ 8 V	±18V	780 pF @ 600 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.