Single FETs, MOSFETs

Results: 2
Series
U-MOSVIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 25A, 10V235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V124 nC @ 10 V
Vgs (Max)
±8V+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
55 pF @ 10 V6290 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)90W (Tc)
Operating Temperature
150°C (TJ)175°C
Supplier Device Package
DPAK+SSM
Package / Case
SC-75, SOT-416TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
4,628,762
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.39490
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.5V, 4.5V
235mOhm @ 800mA, 4.5V
1V @ 1mA
1 nC @ 4.5 V
±8V
55 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
4,386
In Stock
1 : ¥16.09000
Cut Tape (CT)
2,000 : ¥4.66268
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Ta)
6V, 10V
13.8mOhm @ 25A, 10V
3V @ 1mA
124 nC @ 10 V
+10V, -20V
6290 pF @ 10 V
-
90W (Tc)
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.