Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7000 MOSFET TO92 N 60V 0.2A 5OHM 150C onsemi	43,113 In Stock 40,000 Factory	1 : ¥4.02000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDC606P MOSFET P-CH 12V 6A SUPERSOT6 onsemi	6,412 In Stock	1 : ¥7.22000 Cut Tape (CT) 3,000 : ¥2.97439 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.8V, 4.5V	26mOhm @ 6A, 4.5V	1.5V @ 250µA	25 nC @ 4.5 V	±8V	1699 pF @ 6 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
2N7000-D74Z MOSFET N-CH 60V 200MA TO92-3 onsemi	19,909 In Stock 118,000 Factory	1 : ¥2.63000 Cut Tape (CT) 2,000 : ¥0.79530 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000BU MOSFET N-CH 60V 200MA TO92-3 onsemi	27,415 In Stock 10,000 Factory	1 : ¥2.96000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000-D75Z MOSFET N-CH 60V 200MA TO92-3 onsemi	14,161 In Stock 10,000 Factory	1 : ¥3.12000 Cut Tape (CT) 2,000 : ¥0.85256 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000-G MOSFET N-CH 60V 200MA TO92-3 Microchip Technology	7,990 In Stock	1 : ¥4.10000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tj)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±30V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP2106N3-G MOSFET P-CH 60V 250MA TO92-3 Microchip Technology	2,086 In Stock	1 : ¥5.25000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	250mA (Tj)	5V, 10V	12Ohm @ 500mA, 10V	3.5V @ 1mA	-	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF9Z34NPBF MOSFET P-CH 55V 19A TO220AB Infineon Technologies	72,534 In Stock	1 : ¥5.42000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF710PBF MOSFET N-CH 400V 2A TO220AB Vishay Siliconix	6,471 In Stock	1 : ¥6.16000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4V @ 250µA	17 nC @ 10 V	±20V	170 pF @ 25 V	-	36W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TP2104N3-G MOSFET P-CH 40V 175MA TO92-3 Microchip Technology	1,613 In Stock	1 : ¥6.40000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	40 V	175mA (Tj)	4.5V, 10V	6Ohm @ 500mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRLB8721PBF MOSFET N-CH 30V 62A TO220AB Infineon Technologies	14,417 In Stock	1 : ¥8.62000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	4.5V, 10V	8.7mOhm @ 31A, 10V	2.35V @ 25µA	13 nC @ 4.5 V	±20V	1077 pF @ 15 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BS170-D26Z SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	138,646 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	-	±20V	40 pF @ 10 V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.