Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
112mOhm @ 2.8A, 4.5V2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V10 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
32 pF @ 30 V405 pF @ 10 V
Power Dissipation (Max)
380mW (Ta)860mW (Ta), 1.6W (Tc)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2301CDS-T1-GE3
MOSFET P-CH 20V 3.1A SOT23-3
Vishay Siliconix
152,990
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.82533
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.1A (Tc)
2.5V, 4.5V
112mOhm @ 2.8A, 4.5V
1V @ 250µA
10 nC @ 4.5 V
±8V
405 pF @ 10 V
-
860mW (Ta), 1.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN62D0U-13
MOSFET N-CH 60V 380MA SOT23
Diodes Incorporated
65,938
In Stock
1 : ¥2.55000
Cut Tape (CT)
10,000 : ¥0.33100
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
1.8V, 4.5V
2Ohm @ 100mA, 4.5V
1V @ 250µA
0.5 nC @ 4.5 V
±20V
32 pF @ 30 V
-
380mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.