Single FETs, MOSFETs

Results: 5
Manufacturer
GeneSiC Semiconductoronsemi
Series
-G3R™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V60 V1700 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 71A (Tc)28A (Ta), 150A (Tc)45A (Ta), 240A (Tc)48A (Ta), 298A (Tc)61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V
Rds On (Max) @ Id, Vgs
0.9mOhm @ 20A, 10V1.21mOhm @ 50A, 10V3mOhm @ 27A, 10V7mOhm @ 11A, 10V58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id
2.2V @ 200µA2.7V @ 8mA3.5V @ 190µA4V @ 135µA4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs
14.4 nC @ 10 V34 nC @ 10 V75 nC @ 10 V131.4 nC @ 10 V182 nC @ 15 V
Vgs (Max)
±15V+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1035 pF @ 30 V2630 pF @ 30 V4523 pF @ 1000 V4960 pF @ 25 V9450 pF @ 15 V
Power Dissipation (Max)
3.6W (Ta), 61W (Tc)3.7W (Ta), 110W (Tc)3.8W (Ta), 144W (Tc)4.3W (Ta), 136.4W (Tc)438W (Tc)
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
5-DFN (5x6) (8-SOFL)5-DFNW (4.9x5.9) (8-SOFL-WF)8-HPSOFTO-247-4
Package / Case
8-PowerSFN8-PowerTDFN, 5 LeadsTO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
749
In Stock
1 : ¥271.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
8-HPSOF Top View
FDBL9406-F085T6
MOSFET N-CH 40V 45A/240A 8HPSOF
onsemi
1,889
In Stock
1 : ¥45.56000
Cut Tape (CT)
2,000 : ¥21.27084
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
45A (Ta), 240A (Tc)
-
1.21mOhm @ 50A, 10V
3.5V @ 190µA
75 nC @ 10 V
+20V, -16V
4960 pF @ 25 V
-
4.3W (Ta), 136.4W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
8-PowerTDFN, 5 Leads
NVMFS5C670NWFT1G
MOSFET N-CH 60V 17A/71A 5DFN
onsemi
0
In Stock
Check Lead Time
1 : ¥17.08000
Cut Tape (CT)
1,500 : ¥8.11182
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 71A (Tc)
10V
7mOhm @ 11A, 10V
4V @ 53µA
14.4 nC @ 10 V
±20V
1035 pF @ 30 V
-
3.6W (Ta), 61W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NTMFS0D9N03CGT1G
MOSFET N-CH 30V 48A/298A 5DFN
onsemi
1,515
In Stock
21,000
Factory
1 : ¥20.52000
Cut Tape (CT)
1,500 : ¥9.73697
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta), 298A (Tc)
10V
0.9mOhm @ 20A, 10V
2.2V @ 200µA
131.4 nC @ 10 V
±20V
9450 pF @ 15 V
-
3.8W (Ta), 144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NTMFS5C628NT1G
MOSFET N-CH 60V 28A/150A 5DFN
onsemi
84
In Stock
1 : ¥13.46000
Cut Tape (CT)
1,500 : ¥6.37058
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
28A (Ta), 150A (Tc)
10V
3mOhm @ 27A, 10V
4V @ 135µA
34 nC @ 10 V
±20V
2630 pF @ 30 V
-
3.7W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.