Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 140A (Tc)30A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 20A, 10V7.5mOhm @ 20A, 10V23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10µA3.8V @ 36µA4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V29.5 nC @ 10 V126 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 25 V2080 pF @ 40 V9550 pF @ 50 V
Power Dissipation (Max)
2.1W (Ta), 500W (Tc)36W (Tc)69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3-11PG-TSDSON-8-26TO-263 (D2PAK)
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-PowerTDFN
BSZ075N08NS5ATMA1
MOSFET N-CH 80V 40A 8TSDSON
Infineon Technologies
65,652
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥5.26864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
6V, 10V
7.5mOhm @ 20A, 10V
3.8V @ 36µA
29.5 nC @ 10 V
±20V
2080 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
TO252-3
IPD30N06S4L23ATMA2
MOSFET N-CH 60V 30A TO252-31
Infineon Technologies
934
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.66039
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
4.5V, 10V
23mOhm @ 30A, 10V
2.2V @ 10µA
21 nC @ 10 V
±16V
1560 pF @ 25 V
-
36W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOB290L
MOSFET N-CH 100V 18A/140A TO263
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
1 : ¥29.80000
Cut Tape (CT)
800 : ¥17.99015
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18A (Ta), 140A (Tc)
10V
3.2mOhm @ 20A, 10V
4.1V @ 250µA
126 nC @ 10 V
±20V
9550 pF @ 50 V
-
2.1W (Ta), 500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.