Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesTexas InstrumentsUMWVishay Siliconix
Series
-NexFET™StrongIRFET™ 2TrenchFET®UMW
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
30 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)3.16A (Ta)4A (Ta)28A (Ta), 182A (Tc)150A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V3.8mOhm @ 100A, 6V35mOhm @ 4A, 10V47mOhm @ 3.5A, 10V220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA3.2V @ 250µA3.8V @ 139µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V7 nC @ 5 V8.3 nC @ 10 V76 nC @ 10 V133 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
305 pF @ 15 V401 pF @ 25 V555 pF @ 15 V6200 pF @ 40 V7820 pF @ 40 V
Power Dissipation (Max)
750mW (Ta)1.25W (Ta)1.3W (Ta)3.8W (Ta), 214W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3SOT-23SOT-23-3SOT-23-3 (TO-236)TO-220-3
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN10H220LQ-7
MOSFET N-CH 100V 1.6A SOT23-3
Diodes Incorporated
45,860
In Stock
198,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.65383
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±16V
401 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2306BDS-T1-E3
MOSFET N-CH 30V 3.16A SOT23-3
Vishay Siliconix
13,172
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65107
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.16A (Ta)
4.5V, 10V
47mOhm @ 3.5A, 10V
3V @ 250µA
4.5 nC @ 5 V
±20V
305 pF @ 15 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-220-3
CSD19505KCS
MOSFET N-CH 80V 150A TO220-3
Texas Instruments
484
In Stock
1 : ¥23.73000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Ta)
6V, 10V
3.8mOhm @ 100A, 6V
3.2V @ 250µA
76 nC @ 10 V
±20V
7820 pF @ 40 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
236
In Stock
1 : ¥22.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
28A (Ta), 182A (Tc)
6V, 10V
2.4mOhm @ 100A, 10V
3.8V @ 139µA
133 nC @ 10 V
±20V
6200 pF @ 40 V
-
3.8W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
SI2306A
SI2306A
30V 3.5A 1.25W 57MR@10V,3.5A 3V@
UMW
2,820
In Stock
1 : ¥3.83000
Cut Tape (CT)
3,000 : ¥0.78817
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
4.5V, 10V
35mOhm @ 4A, 10V
3V @ 250µA
7 nC @ 5 V
±20V
555 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.