Single FETs, MOSFETs

Results: 2
Series
HEXFET®StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)557A (Tc)
Rds On (Max) @ Id, Vgs
0.65mOhm @ 100A, 10V112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V19680 pF @ 25 V
Power Dissipation (Max)
2W (Ta)416W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAK (7-Lead)Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSOT-23-6, TSOT-6
IRF5803TRPBF
MOSFET P-CH 40V 3.4A MICRO6
Infineon Technologies
32,763
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.47257
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
3.4A (Ta)
4.5V, 10V
112mOhm @ 3.4A, 10V
3V @ 250µA
37 nC @ 10 V
±20V
1110 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro6™(TSOP-6)
SOT-23-6 Thin, TSOT-23-6
TO-263-7, D2Pak
IRL40SC228
MOSFET N-CH 40V 557A D2PAK
Infineon Technologies
4,787
In Stock
1 : ¥33.17000
Cut Tape (CT)
800 : ¥20.02793
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
557A (Tc)
4.5V, 10V
0.65mOhm @ 100A, 10V
2.4V @ 250µA
307 nC @ 4.5 V
±20V
19680 pF @ 25 V
-
416W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.