Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Rds On (Max) @ Id, Vgs
33mOhm @ 4A, 4.5V55mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.5 V10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 10 V630 pF @ 10 V
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
17,427
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
55mOhm @ 3A, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3 Flat Leads
SSM3K345R,LF
MOSFET N-CHANNEL 20V 4A SOT23F
Toshiba Semiconductor and Storage
24,372
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.75881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
33mOhm @ 4A, 4.5V
1V @ 1mA
3.6 nC @ 4.5 V
±8V
410 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.