Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
MDmesh™StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
150 V600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)203A (Tc)
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V390mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.6V @ 265µA4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V200 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
508 pF @ 100 V12000 pF @ 75 V
Power Dissipation (Max)
3.8W (Ta), 556W (Tc)90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3TO-252 (DPAK)
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
1,444
In Stock
1 : ¥91.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
203A (Tc)
10V
2.7mOhm @ 100A, 10V
4.6V @ 265µA
200 nC @ 10 V
±20V
12000 pF @ 75 V
-
3.8W (Ta), 556W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
DPAK
STD12N60DM6
MOSFET N-CH 600V 10A DPAK
STMicroelectronics
2,419
In Stock
1 : ¥16.58000
Cut Tape (CT)
2,500 : ¥7.46941
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
-
390mOhm @ 5A, 10V
4.75V @ 250µA
17 nC @ 10 V
±25V
508 pF @ 100 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.