Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiSTMicroelectronics
Series
-MDmesh™ K5OptiMOS™Polar
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V100 V1000 V1500 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)2A (Tc)14A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V900mOhm @ 7A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.5V @ 75µA4.5V @ 100µA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
24.3 nC @ 10 V55 nC @ 10 V89 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V655 pF @ 25 V3145 pF @ 100 V4000 pF @ 50 V
Power Dissipation (Max)
225mW (Ta)86W (Tc)114W (Tc)446W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TDSON-8-1SOT-23-3 (TO-236)TO-247-3TO-252AA
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
536,644
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC070N10NS3GATMA1
MOSFET N-CH 100V 90A TDSON-8
Infineon Technologies
15,993
In Stock
1 : ¥16.26000
Cut Tape (CT)
5,000 : ¥7.05170
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
6V, 10V
7mOhm @ 50A, 10V
3.5V @ 75µA
55 nC @ 10 V
±20V
4000 pF @ 50 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-247-3 HiP
STW21N150K5
MOSFET N-CH 1500V 14A TO247
STMicroelectronics
404
In Stock
1 : ¥107.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
14A (Tc)
10V
900mOhm @ 7A, 10V
5V @ 100µA
89 nC @ 10 V
±30V
3145 pF @ 100 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-252-3
IXTY2N100P
MOSFET N-CH 1000V 2A TO252
Littelfuse Inc.
1,065
In Stock
1,190
Factory
1 : ¥27.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
2A (Tc)
10V
7.5Ohm @ 500mA, 10V
4.5V @ 100µA
24.3 nC @ 10 V
±20V
655 pF @ 25 V
-
86W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.