Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
30mOhm @ 25A, 10V2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2.2V @ 8µA
Vgs (Max)
±10V±16V
Input Capacitance (Ciss) (Max) @ Vds
12 pF @ 10 V1220 pF @ 25 V
Power Dissipation (Max)
100mW (Ta)29W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TA)
Supplier Device Package
PG-TO252-3-11SSM
Package / Case
SC-75, SOT-416TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
157,403
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.32439
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.5V, 4.5V
2.2Ohm @ 100mA, 4.5V
1V @ 1mA
-
±10V
12 pF @ 10 V
-
100mW (Ta)
150°C (TA)
-
-
Surface Mount
SSM
SC-75, SOT-416
TO252-3
IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31
Infineon Technologies
14,454
In Stock
1 : ¥8.54000
Cut Tape (CT)
2,500 : ¥3.53800
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
30mOhm @ 25A, 10V
2.2V @ 8µA
16.3 nC @ 10 V
±16V
1220 pF @ 25 V
-
29W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.