Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IMW120R020M1HXKSA1 SIC DISCRETE Infineon Technologies	118 In Stock	1 : ¥206.39000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	26.9mOhm @ 41A, 18V	5.2V @ 17.6mA	109 nC @ 18 V	+20V, -5V	3460 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
UF3SC065007K4S MOSFET N-CH 650V 120A TO247-4 Qorvo	1,592 In Stock	1 : ¥623.12000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	650 V	120A (Tc)	12V	9mOhm @ 50A, 12V	6V @ 10mA	214 nC @ 15 V	±20V	8360 pF @ 100 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
IXFN100N65X2 MOSFET N-CH 650V 78A SOT227B Littelfuse Inc.	305 In Stock	1 : ¥277.33000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	78A (Tc)	10V	30mOhm @ 50A, 10V	5V @ 4mA	183 nC @ 10 V	±30V	10800 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
STY145N65M5 MOSFET N-CH 650V 138A MAX247 STMicroelectronics	0 In Stock Check Lead Time	1 : ¥299.66000 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	138A (Tc)	10V	15mOhm @ 69A, 10V	5V @ 250µA	414 nC @ 10 V	±25V	18500 pF @ 100 V	-	625W (Tc)	150°C (TJ)	-	-	Through Hole	MAX247™	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.