Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 6.5A, 4.5V45mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
1.25V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V23 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 10 V720 pF @ 15 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
AOSS32136C
MOSFET N-CH 20V 6.5A SOT23-3
Alpha & Omega Semiconductor Inc.
209,258
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.5A (Ta)
2.5V, 4.5V
20mOhm @ 6.5A, 4.5V
1.25V @ 250µA
14 nC @ 4.5 V
±12V
660 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
SOT-23-3
AOSS21311C
MOSFET P-CH 30V 4.3A SOT23-3
Alpha & Omega Semiconductor Inc.
6,820
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80150
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
45mOhm @ 4.3A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
720 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.