Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.EPCRohm Semiconductor
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V50 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)14.5A (Ta), 40A (Tc)101A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0.9V, 4.5V1.8V, 4.5V5V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V9.5mOhm @ 14A, 4.5V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 1mA900mV @ 250µA2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 5 V53 nC @ 4.5 V
Vgs (Max)
+6V, -4V±8V
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V3200 pF @ 50 V4195 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)3.1W (Ta), 29W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
7-QFN (3x5)8-DFN-EP (3x3)UMT3F
Package / Case
7-PowerWQFN8-PowerVDFNSC-85
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UMT3F
RU1J002YNTCL
MOSFET N-CH 50V 200MA UMT3F
Rohm Semiconductor
630,701
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34817
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
0.9V, 4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
8-DFN
AON7407
MOSFET P-CH 20V 14.5A/40A 8DFN
Alpha & Omega Semiconductor Inc.
109,224
In Stock
1 : ¥5.09000
Cut Tape (CT)
5,000 : ¥1.62515
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
14.5A (Ta), 40A (Tc)
1.8V, 4.5V
9.5mOhm @ 14A, 4.5V
900mV @ 250µA
53 nC @ 4.5 V
±8V
4195 pF @ 10 V
-
3.1W (Ta), 29W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
62,013
In Stock
1 : ¥54.26000
Cut Tape (CT)
3,000 : ¥30.12901
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.